AON5820 20v common-drain dual n-channel mosfet general description product summary v ds i d (at v gs =4.5v) 10a r ds(on) (at v gs =4.5v) < 9.5m w r ds(on) (at v gs =4.0v) < 10m w r ds(on) (at v gs =3.5v) < 10.5m w r ds(on) (at v gs =3.1v) < 11.5m w r ds(on) (at v gs =2.5v) < 13m w typical esd protection hbm class 2 the AON5820 uses advanced trench technology to provide excellent r ds(on), low gate charge and operation with gate voltages as low as 2.5v while retaining a 12v v gs(max) rating it is esd protected. this device is suitabl e for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. 20v g1 s1 g2 s2 d1 d2 top view bottom view dfn 2x5 d1/d2 g1 s1 s1 g2 s2 s2 symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jc thermal characteristics 1.7 power dissipation a p dsm w t a =70c 1 t a =25c v 12 gate-source voltage units maximum junction-to-ambient a c/w r q ja 30 61 40 parameter typ max junction and storage temperature range -55 to 150 c v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted drain-source voltage 20 85 pulsed drain current c continuous drain current a 10 8 t a =25c t a =70c i d maximum junction-to-case c/w c/w maximum junction-to-ambient a d 4.5 75 5.5 rev 0: oct. 2011 www.aosmd.com page 1 of 6
AON5820 symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 0.3 0.65 1.0 v i d(on) 85 a 5.5 7.4 9.5 t j =125c 8 11 14 5.8 7.6 10 m w 6 8 10.5 m w 6.3 8.3 11.5 m w 6.8 9.2 13 m w g fs 65 s v sd 0.58 1 v i s 2.5 a c iss 1000 1255 1510 pf c oss 150 220 290 pf c rss 100 168 235 pf r g 2.5 k w q g 10 12.5 15 nc q gs 5.5 nc q 6.5 nc v gs =4.5v, v ds =5v v gs =4.5v, i d =10a static drain-source on-resistance diode forward voltage m w on state drain current gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge gate source charge gate drain charge switching parameters v gs =4.5v, v ds =10v, i d =10a reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a zero gate voltage drain current drain-source breakdown voltage i d =250 m a, v gs =0v v ds =v gs, i d =250 m a v ds =0v, v gs =10v maximum body-diode continuous current input capacitance output capacitance forward transconductance i s =1a,v gs =0v v ds =5v, i d =10a dynamic parameters v gs =2.5v, i d =8a v gs =4.0v, i d =10a v gs =3.5v, i d =9a v gs =3.1v, i d =9a gate-body leakage current r ds(on) q gd 6.5 nc t d(on) 1.1 m s t r 2.6 m s t d(off) 7 m s t f 7.4 m s t rr 8.5 11 13.5 ns q rr 12 15 18 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time turn-off delaytime v gs =4.5v, v ds =10v, r l =1 w , r gen =3 w turn-off fall time gate drain charge turn-on delaytime i f =10a, di/dt=500a/ m s body diode reverse recovery charge body diode reverse recovery time i f =10a, di/dt=500a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0: oct. 2011 www.aosmd.com page 2 of 6
AON5820 typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 30 35 40 0 0.5 1 1.5 2 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 4 6 8 10 12 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.0v i d =10a v gs =4.5v i d =10a v gs =2.5v i d =8a v gs =3.1v i d =9a v gs =3.5v i d =9a 25 c 125 c v ds =5v v gs =3.1v v gs =4.5v 0 20 40 60 80 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 4.5v 2.5v 3v v gs =4.0v v gs =3.5v v gs =2.5v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 5 10 15 20 25 0 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =10a 25 c 125 c rev 0: oct. 2011 www.aosmd.com page 3 of 6
AON5820 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 400 800 1200 1600 2000 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case c oss c rss v ds =10v i d =10a t j(max) =150 c t c =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) t j(max) =150 c t c =25 c 100 m s 40 (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q jc =5.5 c/w rev 0: oct. 2011 www.aosmd.com page 4 of 6
AON5820 typical electrical and thermal characteristics 0 5 10 15 20 25 30 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note f) 0 5 10 15 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 14: single pulse power rating junction - to - ambient (note h) t a =25 c 40 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse figure 14: single pulse power rating junction - to - ambient (note h) r q ja =75 c/w rev 0: oct. 2011 www.aosmd.com page 5 of 6
AON5820 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform + dut l vgs isd isd diode recovery test circuit & waveforms vds - vds + i f di/dt i rr q = - idt t rr - + vd c d u t v d d v gs v ds v gs r l r g v g s v ds 1 0% 90 % r esis tive s w itching te st c irc uit & w av eform s t t r d(on ) t on t d (o ff) t f t off ig vgs - + vdc vds i rm vdd vdd rev 0: oct. 2011 www.aosmd.com page 6 of 6
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